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Office: MEYR 366
Phone: 410-455-3427
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Narsingh Singh
Research Professor
Post-Doctoral Rensselaer Polytechnic Institute, Troy, NY 1979; Ph.D. Gorakhpur University, India 1977
SELECTED PUBLICATIONS

A partial list of the publications, presentations and internal reports is given here. Dr. Singh has published more than 200 research papers in highly reputed Journals of U.S.A., U.K., Belgium, France, Germany and India, presented more than 120 conference papers including more than 60 invited talks. He has written more than 200 trade secrets including 19 patents. He edited three books and has been in the editorial board of several journals. Currently he is an Associate Editor of the journal Progress in Crystal Growth and Characterization.

 

   Research Publications

 

·         Selenides for Nonlinear Optical applications, J. Emerging Materials Research, 1, 12, 185 (2012)

·         Performance of Novel Materials for Radiation Detection:  Tl3AsSe3, TlGaSe2, Tl4HgI6, J. Nuclear Instrumentation and Methods in Physics Research Section A  652, 183-185 (2011)

·         Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs, J.Crystal Growth 312, 1142 (2010).

·         Quaternary AgGaGenSe2(n+1) crystals for NLO applications, J. Crystal Growth 312 , 1114 (2010).

·         Effect of AlN doping on the growth morphology of SiC, J. Crystal Research and Technology, 44, 9 903-909  (2009)

·         Optical probes of orientation patterned ZnSe quasi-phase-matched devices, J. Optical Engineering , 48(11), 114201 (2009).

·         (SiC)x(AlN)1-x solid-solution substrates for high temperature and high power devices , Crystal Growth and Design,  10 (8), (2010) 3508–3514

·         Effect of growth conditions on the morphology of PbSe, J. Crystal Growth, 311, 1080-1086 (2009)

·         Novel quaternary semiconductor materials; growth and characterization, IEEE  Trans. Nuclear  Sci. 56, 3 813 (2009).

·         Development of Advanced Radiation Materials and Sensors, ES Technical Journal, 1, 4, 53-64 (2008).

·         Morphology of thick SiC epitaxial film grown by PVT method,, J. Electronic Materials 37 (2008) 379.

  • Operational characteristics of LWIR AOTF based multispectral imager, J. Optical Engineering Vol.47, 1, 013201 (2008).
  • Crystal growth, fabrication, and design of mercurous bromide acousto-optic tunable filters; Optical Engineering, 46, 6, 064001-6 (2007). 
  • Properties of NLO Crystals in THz Wavelength Region, J. Optical Engineering, 45(9), 094002-1 (2006).
  • Periodically Poled Materials for Long Wavelength Infrared (LWIR) NLO Applications, J. Crystal Growth, 274/1-2, 132-137 (2005).
  • X-ray studies of langasite film grown by LPE, J. Materials Science Letters, 22, 1621 (2003)
  • Noncollinear optical parametric oscillator design for walk-off reduction in GaSe crystals, Optical Engineering 42/11, 3270(2003)
  • Physical vapor transport growth of large AlN crystals, J. Crystal Growth  250/1-2, 107(2003)
  • PVT growth and characteristics of AlN single  crystals, Physics of Semiconductor Devices 1, 117 (2003)